HiPerFET TM
Power MOSFETs
IXFK 150N15
IXFX 150N15
V DSS
I D25
R DS(on)
= 150 V
= 150 A
= 12.5 m W
Single MOSFET Die
Preliminary data sheet
t rr £ 250 ns
Symbol
Test Conditions
Maximum Ratings
PLUS 247 TM
(IXFX)
V DSS
V DGR
T J = 25 ° C to 150 ° C
T J = 25 ° C to 150 ° C; R GS = 1 M W
150
150
V
V
V GS
V GSM
Continuous
Transient
± 20
± 30
V
V
G
D
D (TAB)
I D25
I D(RMS)
I DM
I AR
T C = 25 ° C (MOSFET chip capability)
External lead (current limit)
T C = 25 ° C, Note 1
T C = 25 ° C
150
76
600
150
A
A
A
A
TO-264 AA (IXFK)
E AR
E AS
dv/dt
T C = 25 ° C
T C = 25 ° C
I S £ I DM , di/dt £ 100 A/ m s, V DD £ V DSS
T J £ 150 ° C, R G = 2 W
60
3
5
mJ
J
V/ns
G = Gate
S = Source
G
D
S
D = Drain
TAB = Drain
(TAB)
P D
T J
T C = 25 ° C
560
-55 ... +150
W
° C
T JM
T stg
150
-55 ... +150
° C
° C
Features
? International standard packages
T L
M d
Weight
1.6 mm (0.063 in.) from case for 10 s
Mounting torque TO-264
PLUS 247
TO-264
0.9/6
300
° C
Nm/lb.in.
6
g
10
g
? Low R DS (on) HDMOS TM process
? Rugged polysilicon gate cell structure
? Unclamped Inductive Switching (UIS)
rated
? Low package inductance
- easy to drive and to protect
? Fast intrinsic rectifier
Applications
? DC-DC converters
Symbol
Test Conditions
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
min. typ.
max.
? Battery chargers
? Switched-mode and resonant-mode
power supplies
V DSS
V GS(th)
I GSS
I DSS
R DS(on)
V GS = 0 V, I D = 3mA
V DS = V GS , I D = 8mA
V GS = ± 20 V, V DS = 0
V DS = V DSS
V GS = 0 V
V GS = 10 V, I D = 0.5 ? I D25
T J = 25 ° C
T J = 125 ° C
150
2.0
V
4.0 V
± 100 nA
100 m A
2 mA
12.5 m W
? DC choppers
? AC motor control
? Temperature and lighting controls
Advantages
? PLUS 247 TM package for clip or spring
mounting
? Space savings
Note 1
IXYS reserves the right to change limits, test conditions, and dimensions.
? 2000 IXYS All rights reserved
? High power density
98654 (9/99)
1-2
相关PDF资料
IXFK170N10P MOSFET N-CH 100V 170A TO-264
IXFK170N10 MOSFET N-CH 100V 170A TO-264AA
IXFK180N085 MOSFET N-CH 85V 180A TO-264AA
IXFK180N10 MOSFET N-CH 100V 180A TO-264AA
IXFK180N15P MOSFET N-CH 150V 180A TO-264
IXFK20N120P MOSFET N-CH 1200V 20A TO-264
IXFK20N120 MOSFET N-CH 1200V 20A TO-264
IXFK21N100Q MOSFET N-CH 1000V 21A TO-264
相关代理商/技术参数
IXFK150N15P 功能描述:MOSFET 170 Amps 150V 0.013 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFK150N30P3 功能描述:MOSFET N-Channel: Power MOSFET w/Fast Diode RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFK15N100Q 功能描述:MOSFET 15 Amps 1000V 0.725 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFK160N30T 功能描述:MOSFET 160A 300V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFK16N90Q 功能描述:MOSFET 16 Amps 900V 0.65 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFK170N10 功能描述:MOSFET 170 Amps 100V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFK170N10P 功能描述:MOSFET PolarHT HiperFET 100v, 170A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFK170N20P 功能描述:MOSFET 170 Amps 200V 0.014 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube